Theory lab – Quantum simulation with dopants in Silicon

In this lab we are currently investigating the viability of quantitative mapping of important many-body Hamiltonians onto artificially fabricated arrays of donors or acceptors in silicon. We are theoretically looking at the possibility of simulating a controllable version of the metal-insulator transition in a system where variable range interactions and disorder are important. Representative small arrays (1D & 2D) are studied with precise numerical simulations as well as mean-field approximations for predicting the conditions in which conductance measurements can reveal important signatures consistent with quantum phase transitions. We also work on the theory of magnetoresistance and weak localisation which our experimental colleagues in the project have measured for the high-density doping regime. One of our current and future aims is to design arrays where topological edge states will appear and to predict their spectrum and signatures in transport measurements.