80. K. Stockbridge, N. Deßmann, V. Eless, T. Peach, B. N. Murdin, and S. K. Clowes, Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device. Appl. Phys. Lett. 120, 073503 (2022).

79. Chapman, G., Votsi, H., Stock, T. J. Z., Clowes, S. K., Curson, N. J., Aaen, P. H., Murdin, B. N., Microwave Properties of 2D CMOS Compatible Co-Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon. Adv. Electron. Mater. 2022, 2100989.


78. Mateus G. Masteghin, Vivian Tong, Eleanor B. Schneider, Cameron C. L. Underwood, Tomas Peach, Benedict N. Murdin, Roger P. Webb, Steven K. Clowes, and David C. Cox, Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors. Phys. Rev. Materials 5, 124603.

77. Zhu, J., Wu, W., & Fisher, A. J. (2021). Multihole models for deterministically placed acceptor arrays in silicon. PHYSICAL REVIEW B, 104 (12), ARTN 125415. doi:10.1103/PhysRevB.104.125415

76. Crane, E., Schuckert, A., Le, N. H., & Fisher, A. J. (2021). Rydberg entangling gates in silicon. Physical Review Research, 3 (3). doi:10.1103/PhysRevResearch.3.033086

75. Wu, W., & Fisher, A. J. (2021). Excited states of a phosphorus pair in silicon: Combining valley-orbital interaction and electron-electron interactions. PHYSICAL REVIEW B, 104 (3), ARTN 035433. doi:10.1103/PhysRevB.104.035433

74. E.V.S. Hofmann, E. Scalise, F. Montalenti, T.J.Z. Stock, S.R. Schofield, G. Capellini, L. Miglio, N.J. Curson, W.M. Klesse, The formation of a Sn monolayer on Ge(100) studied at the atomic scale. Appl. Surf. Sci. (2021), Vol 561, 2021, 149961.

73. Nils Dessmann, Nguyen H. Le, Viktoria Eless, Steven Chick, Kamyar Saeedi, Alberto Perez-Delgado, Sergey G. Pavlov, Alexander F. G. van der Meer, Konstantin L. Litvinenko, Ian Galbraith, Nikolay V. Abrosimov, Helge Riemann, Carl R. Pidgeon, Gabriel Aeppli, Britta Redlich & Benedict N. Murdin, Highly efficient THz four-wave mixing in doped silicon. Light Sci Appl 10, 71 (2021).

72. Nathan Cassidy, Paul Blenkinsopp, Ian Brown, Richard J. Curry, B. N. Murdin, Roger Webb, David Cox. Single Ion Implantation of Bismuth. Phys. Status Solidi A 2021, 218, 2000237.

71. K. L. Litvinenko, Nguyen H. Le, B. Redlich, C. R. Pidgeon, N. V. Abrosimov, Y. Andreev, Zhiming Huang; B. N. Murdin. The multi-photon induced Fano effect. Nature Comms, 12, 454 (2021).


70. W Wu, AJ Fisher, Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions. arXiv:2006.16127

69. Gramse G, Kölker A, Škereň T, Stock TJZ, Aeppli G, Kienberger F, Fuhrer A & Curson NJ. Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p-n junctions. Nature Electronics, 3, 531-538. 

68. Stock, Taylor; Warschkow, Oliver; Constantinou, Procopios; Li, Juerong; Fearn, Sarah; Crane, Eleanor; Hofmann, Emily; Kölker, Alexander; McKenzie, David; Schofield, Steven; Curson, Neil. Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy. ACS Nano,  2020 Mar 24; 14(3): 3316–3327

67. Jianhua Zhu, Wei Wu, and Andrew J. Fisher. Linear combination of atomic orbitals model for deterministically placed acceptor arrays in silicon. Phys. Rev. B 101, 085303.

66. K Stockbridge, S Chick, E Crane, A Fisher and B N Murdin. Using non-homogeneous point process statistics to find multi-species event clusters in an implanted semiconductor. J. Phys. Commun. 4 015010

65. Le, N.H., Fisher, A.J., Curson, N.J., and Ginossar E.. Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices. npj Quantum Inf 6, 24 (2020).


64. Eleanor Crane, Thomas Crane, Alexander Schuckert, Nguyen H. Le, Kristian Stockbridge, Steven Chick, and Andrew J. Fisher, Optically Controlled Entangling Gates in Randomly Doped Silicon, Phys. Rev. B 100, 064201 – Published 8 August 2019, DOI:

63. T. Peach, K. Stockbridge, Juerong Li, K. P. Homewood, M. A. Lourenco, S. Chick, M. A. Hughes, B. N. Murdin, and S. K. Clowes, Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon, Applied Physics Letters 115 (7), 072102 (12 August 2019) DOI: 10.1063/1.5115835

62. Poulton, Jack T. L.; Bowler, David R., compensation in Bulk Silicon, arXiv:1907.03636

61. K Saeedi, N Stavrias, B Redlich, A F G van der Meer, R Mikhaylovskiy, A V Kimel, C R Pidgeon and B N Murdin, Spin preservation during THz orbital pumping of shallow donors in silicon, Journal of Physics: Condensed Matter 31 (43), 435401 (26 July 2019) DOI: 10.1088/1361-648X/ab31d2

60. NH Le, GV Lanskii, G Aeppli, BN Murdin, Giant non-linear susceptibility of hydrogenic donors in silicon and germanium, Nature Light: Science & Applications 8 (1), 64 (10/7 2019) DOI: 10.1038/s41377-019-0174-6


59. Steven Chick, Guy Matmon, Ben Murdin, Mira Naftaly, Metrology of Complex Refractive Index for Solids in the Terahertz Regime Using Frequency Domain Spectroscopy, Metrologia 55 6, October 2018

58. K. Murata and C. Kirkham and S. Tsubomatsu and T. Kanazawa and K. Nitta and Y. Terada and T. Uruga and K.-i. Nittoh and D. R. Bowler and K. Miki, Atomic layer doping of Mn magnetic impurities from surface chains at a Ge/Si hetero-interface, Nanoscale  10  295-301  (2018)

57. Tom Peach, Kevin Homewood, Manon Lourenco, Mark Hughes, Kaymar Saeedi, Nik Stavrias, Juerong Li, Steven Chick, Ben Murdin, Steven Clowes, The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon, Advanced Quantum Technologies , p. 1800038

56. Juerong Li, Nguyen H. Le, K. L. Litvinenko, S. K. Clowes, H. Engelkamp, S. G. Pavlov, H.-W. Hübers, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, C. R. Pidgeon, A. Fisher, Zaiping Zeng, Y.-M. Niquet, and B. N. Murdin, Radii of Rydberg states of isolated silicon donors, Phys. Rev. B 98, 085423

55. K. Saeedi, N. Stavrias, B. Redlich, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, and B. N. Murdin, Short lifetime components in the relaxation of boron acceptors in silicon, Phys. Rev. B 97, 125205

54. M. A. W. van Loon, N. Stavrias, Nguyen H. Le, K. L. Litvinenko, P. T. Greenland, C. R. Pidgeon, K. Saeedi, B. Redlich, G. Aeppli & B. N. Murdin, Giant multiphoton absorption for THz resonances in silicon hydrogenic donors, Nature Photonics, volume 12, pages 179–184 (2018), doi:10.1038/s41566-018-0111-x

53. Guy Matmon, Eran Ginossar, Byron J. Villis, Alex Kölker, Tingbin Lim, Hari Solanki, Steven R. Schofield, Neil J. Curson, Juerong Li, Ben N. Murdin, Andrew J. Fisher, Gabriel Aeppli. 2D-3D crossover in a dense electron liquid in silicon, Phys. Rev. B 97, 155306

52. W. Wu, P. T. Greenland, A. J. Fisher, et al. Excited states of defect linear arrays in silicon: A first-principles study based on hydrogen cluster analogues, Phys. Rev. B 97, 035205

51. Richard Smith, David R. Bowler, Reaction paths of alane dissociation on the Si(0 0 1) surface, Journal of Physics: Condensed Matter, Volume 30, Number 10


50. S. Chick, N. Stavrias, K. Saeedi, B. Redlich, P. T. Greenland, G. Matmon, M. Naftaly, C. R. Pidgeon, G. Aeppli & B. N. Murdin, Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation, Nature Communications volume 8, Article number: 16038 (2017), doi:10.1038/ncomms16038

49. Richard Smith, David R. Bowler, Alane adsorption and dissociation on the Si(0 0 1) surface, Journal of Physics: Condensed Matter, Volume 29, Number 39

48. Nguyen H. Le, Andrew J. Fisher, and Eran Ginossar, Extended Hubbard model for mesoscopic transport in donor arrays in silicon, Phys. Rev. B 96, 245406

47. M. Longobardi, C. J. Kirkham, R. Villarreal, S. A. Köster, D. R. Bowler, and Ch. Renner, Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study . Phys. Rev. B (2017) 10.1103/PhysRevB.96.235421

46. C. C. J. Kirkham, M. Longobardi, S. A. Köster, Ch. Renner, and D. R. Bowler, Subatomic electronic feature from dynamic motion of Si dimer defects in Bi nanolines on Si(001). Phys. Rev. B (2017) 10.1103/PhysRevB.96.075304

45. N. Stavrias, K. Saeedi, B. Redlich, P. T. Greenland, H. Riemann, N. V. Abrosimov, M. L. W. Thewalt, C. R. Pidgeon, and B. N. Murdin, Competition between homogeneous and inhomogeneous broadening of orbital transitions in Si:Bi, Phys. Rev. B 96, 155204

44. Leonardo Banchi, Joaquín Fernández-Rossier, Cyrus F. Hirjibehedin, and Sougato Bose, Gating Classical Information Flow via Equilibrium Quantum Phase Transitions, Phys. Rev. Lett. 118, 147203 

43. Georg Gramse, Alexander Kölker, Tingbin Lim, Taylor J. Z. Stock, Hari Solanki, Steven R. Schofield, Enrico Brinciotti, Gabriel Aeppli, Ferry Kienberger, and Neil J. Curson, Nondestructive imaging of atomically thin nanostructures buried in silicon, Science Advances 3 (6) (2017). DOI: 10.1126/sciadv.1602586

42. K. Murata, Kirkham C, Shimomura M, Nitta K, Uruga T, Terada Y, Nittoh KI, Bowler DR, Miki K., Dopant activation mechanism of Bi wire-delta-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory.  J. Phys. Cond. Matt. (2017) 10.1088/1361-648X/aa6180

41. Keisuke Sagisaka, Jun Nara and David Bowler, Importance of bulk states for the electronic structure of semiconductor surfaces: implications for finite slabs, Journal of Physics: Condensed Matter, Volume 29, Number 14 (2017)

40. Sharad Joshi, Carl R. Pidgeon, Ben N. Murdin, and Ian Galbraith, Phase control of photon-echo dynamics with overlapping pulse pairs, Phys. Rev. A 95, 013416 (2017)

39. Andreev Yu, Kokh AE, Kokh KA, Lanskiy GV, Litvinenko K, Mamrashev AA, Molloy JF, Murdin B, Naftaly M, Nikolaev NA and Svetlichnyi VA, Observation of a different birefringence order at optical and THz frequencies in LBO crystal, Optical Materials, 66. pp. 94-97 (2017)

38. V. Brazdova and D. R. Bowler and K. Sinthiptharakoon and P. Studer and A. Rahnejat and N. J. Curson and S. R. Schofield and A. J. Fisher, Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory, Phys. Rev. B 95 075408 (2017)


37. Litvinenko, K.L., Juerong Li, N. Stavrias, A.J. Meaney, P.C.M. Christianen, H. Engelkamp, K.P. Homewood, C.R. Pidgeon, and B.N. Murdin, The Quadratic Zeeman Effect Used for State-Radius Determination in Neutral Donors and Donor Bound Excitons in Si:P. Semiconductor Science and Technology, 2016. 31(4): p. 045007. doi:10.1088/0268-1242/31/4/045007

36. K. L. Litvinenko, P. T. Greenland, B. Redlich, C. R. Pidgeon, G. Aeppli, and B. N. Murdin, Weak probe readout of coherent impurity orbital superpositions in silicon, Phys. Rev. B 94, 235207. DOI:

35. Matmon, G. and Lynch, S. A. and Rosenbaum, T. F. and Fisher, A. J. and Aeppli, G., Optical response from terahertz to visible light of electronuclear transitions in LiYF4:Ho3+, Physical Review B, Vol. 94 (2016), p. 205132, DOI:

34. O. Warschkow, N. J. Curson, S. R. Schofield, N. A. Marks, H. F. Wilson, M. W. Radny, P. V. Smith, T. C. G. Reusch, D. R. McKenzie, and M. Y. Simmons, Reaction Paths of Phosphine Dissociation on Silicon (001).  J. Chem. Phys. (2016) 10.1063/1.4939124


33. P. T. Greenland, G. Matmon, B. J. Villis, E. T. Bowyer, Juerong Li, B. N. Murdin, A. F. G. van der Meer, B. Redlich, C. R. Pidgeon, and G. Aeppli “Quantitative analysis of electrically detected Ramsey fringes in P-doped Si”  Phys. Rev. B, 92, 165310 (2015) DOI:10.1103/PhysRevB.92.165310

32. K. L. Litvinenko, E. T. Bowyer, P. T. Greenland, N. Stavrias, Juerong Li, R. Gwilliam, B. J. Villis, G. Matmon, M. L. Y. Pang, B. Redlich, A. F. G. van der Meer, C. R. Pidgeon, G. Aeppli and B. N. Murdin “Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out”  Nat. Comms, 6, 6549 (2015) doi:10.1038/ncomms7549

31. Saeedi, K., M. Szech, P. Dluhy, J.Z. Salvail, K.J. Morse, H. Riemann, N.V. Abrosimov, N. Nötzel, K.L. Litvinenko, B.N. Murdin, and M.L.W. Thewalt, Optical Pumping and Readout of Bismuth Hyperfine States in Silicon for Atomic Clock Applications. Sci. Rep., 2015. 5,  DOI: 10.1038/srep10493.

30. A. Nakata, D R. Bowler  and T Miyazaki., Optimized multi-site local orbitals in the large-scale DFT program CONQUEST.  Phys. Chem. Chem. Phys. (2015) 10.1039/C5CP00934K

29. Murdin, B. N., K. Litvinenko, J. R. Li, E. Bowyer, M. Pang, P. T. Greenland, B. Villis, G. Aeppli, A. F. G. van der Meer, B. Redlich, H. Engelkamp, and C. R. Pidgeon. “Nano-Orbitronics in Silicon.” In Ultrafast Magnetism I, edited by J. Y. Bigot, W. Hubner, T. Rasing, and R. Chantrell, vol 159, Springer Proceedings in Physics, 92-93, 2015.

28. Park, J., Y. A. Soh, G. Aeppli, X. Feng, Y. B. Ou, K. He, and Q. K. Xue. “Crystallinity of Tellurium Capping and Epitaxy of Ferromagnetic Topological Insulator Films on Srtio3.” Scientific Reports, 2015. 5: p. 11595.


27. K. Sinthiptharakoon, S.R. Schofield, P. Studer, V. Brázdová, C.F. Hirjibehedin, D.R. Bowler and N.J. Curson “Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy”  Journal of Physics: Condensed Matter, 26 012001 (2014) doi:10.1088/0953-8984/26/1/012001

26. K. L. Litvinenko, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, C. R. Pidgeon, and B. N. Murdin “Photon assisted tunneling in pairs of silicon donors”  Phys. Rev. B, 89, 235204 (2014) doi:10.1103/PhysRevB.89.235204

25. Ellis T. Bowyer, B. J. Villis, Juerong Li, K. L. Litvinenko, B. N. Murdin, Morteza Erfani, Guy Matmon, Gabriel Aeppli, Jean-Michel Ortega, Rui Prazeres, Li Dong and Xiamei Yu “Picosecond dynamics of a silicon donor based terahertz detector device”  Appl. Phys. Lett., 105, 021107 (2014) doi:10.1063/1.4890526

24. K. L. Litvinenko, M. Pang, Juerong Li, E. Bowyer, H. Engelkamp, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, S. G. Pavlov, H.-W. Hübers, C. R. Pidgeon, and B. N. Murdin “High-field impurity magneto-optics of Si:Se”  Phys. Rev. B, 90, 115204 (2014) doi:10.1103/PhysRevB.90.115204

23. Y. Wen, W. Ma, J. Bailey, G. Matmon, X. Yu, and G. Aeppli, “Planar broadband terahertz metamaterial absorber using single nested resonator,” inCLEO: 2014, OSA Technical Digest (online) (Optical Society of America, 2014), paper JW2A.118. doi:10.1364/CLEO_AT.2014.JW2A.118

22. Yongzheng Wen, Wei Ma, Joe Bailey, Guy Matmon, Xiaomei Yu, and Gabriel Aeppli, “Planar broadband and high absorption metamaterial using single nested resonator at terahertz frequencies,” Opt. Lett. 39, 1589-1592 (2014). doi: 10.1364/OL.39.001589

21. Wen, Yongzheng and Ma, Wei and Bailey, Joe and Matmon, Guy and Aeppli, Gabriel and Yu, Xiaomei, Absorption modulation of terahertz metamaterial by varying the conductivity of ground plane, Applied Physics Letters, 105, 141111 (2014). doi: 10.1063/1.4897931


20. Gavin W. Morley, Petra Lueders, M. Hamed Mohammady, Setrak J. Balian, Gabriel Aeppli, Christopher W. M. Kay, Wayne M. Witzel, Gunnar Jeschke & Tania S. Monteiro “Quantum control of hybrid nuclear–electronic qubits”, Nature Materials 12, 103 (2013) 10.1038/nmat3499

19. B.N. Murdin, Juerong Li, M.L.Y. Pang, E.T. Bowyer, K.L. Litvinenko, S.K. Clowes, H. Engelkamp, C.R. Pidgeon, I. Galbraith, N.V. Abrosimov, H. Riemann, S.G. Pavlov, H-W. Hübers & P.G. Murdin, “Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars” Nature Communications 4, 1469 (2013) 10.1038/ncomms2466

18. N. Q. Vinh, B. Redlich, A. F. G. van der Meer, C. R. Pidgeon, P. T. Greenland, S. A. Lynch, G. Aeppli, and B. N. Murdin “Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon” Phys. Rev. X 3, 011019 (2013) 10.1103/PhysRevX.3.011019

17. K. Iwaya, D. R. Bowler, V. Brázdová, A. Ferreira da Silva, Ch. Renner, W. Wu, A. J. Fisher, A. M. Stoneham, and G. Aeppli “Half-filled orbital and unconventional geometry of a common dopant in Si(001)” Phys. Rev. B 88, 035440 (2013) doi:10.1103/PhysRevB.88.035440

16. Philipp Studer, Steven R. Schofield, Cyrus F. Hirjibehedin, and Neil J. Curson “Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy” Applied Physics Letters 102, 012107 (2013) doi: 10.1063/1.4772508

15. S.R. Schofield, P. Studer, C.F. Hirjibehedin, N. J. Curson, G. Aeppli, and D.R. Bowler “Quantum engineering at the silicon surface using dangling bonds” Nature Communications 4, 1649 (2013) doi: 10.1038/ncomms2679

14. Yongzheng Wen, Wei Ma, Bailey, J., Matmon, G., Xiaomei Yu and Aeppli, G., “Dual-band metamaterial absorbers at terahertz frequency based on gold/parylene-C/silicide structure,” Microwave Conference Proceedings (APMC), 2013 Asia-Pacific , vol., no., pp.1191,1193, 5-8 Nov. (2013)doi:10.1109/APMC.2013.6695067

13. Y. Wen, W. Ma, J. Bailey, G. Matmon, X. Yu, and G. Aeppli, “Polarization-independent dual-band terahertz metamaterial absorbers based on gold/parylene-C/silicide structure,” Appl. Opt.  52, 4536-4540 (2013).doi:10.1364/AO.52.004536


12. C. J. Kirkham, V. Brázdová, D. R. Bowler; “Bi on the Si(001) surface”, Physical Review B 86, 035328 (2012) 10.1103/PhysRevB.86.035328

11. M. H. Mohammady, G. W. Morley, A. Nazir, and T. S. Monteiro “Analysis of quantum coherence in bismuth-doped silicon: A system of strongly coupled spin qubits” Physical Review B 85, 094404 (2012) 10.1103/PhysRevB.85.094404

10. S.J. Balian , M. B. A. Kunze, M. H. Mohammady, G. W. Morley, W. M. Witzel, C. W. M. Kay and T. S. Monteiro “Measuring central-spin interaction with a spin bath by pulsed ENDOR: Towards suppression of spin diffusion decoherence” Physical Review B 86, 104428 (2012) 10.1103/PhysRevB.86.104428

9. D. R. McCamey, C. Boehme, G. W. Morley, and J. van Tol “Electrically detected spin echoes of donor nuclei in silicon” Physical Review B 85, 073201 (2012).10.1103/PhysRevB.85.073201

8. Philipp Studer, Veronika Brázdová, Steven R. Schofield, David R. Bowler, Cyrus F. Hirjibehedin, and Neil J. Curson “Site-Dependent Ambipolar Charge States Induced by Group V Atoms in a Silicon Surface” ACS Nano 6, 10456 (2012) doi: 10.1021/nn3039484


7. Philipp Studer, Steven R. Schofield, Greg Lever, David R. Bowler, Cyrus F. Hirjibehedin, and Neil J. Curson, “Model system for controlling strain in silicon at the atomic scale”,Physical Review B 84, 041306(R) (2011) 10.1103/PhysRevB.84.041306

6. G. W. Morley, D R. McCamey, C Boehme, J van Tol “Electrically detected Rabi oscillations of phosphorus qubits in silicon” physica status solidi (b), 248, 2697, (2011)10.1002/pssb.201100145


5. S. A. Lynch, G. Matmon, S. G. Pavlov, K. L. Litvinenko, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H.-W. Hübers “Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe” Physical Review B 82, 245206 (2010). 10.1103/PhysRevB.82.245206

4. D R McCamey, J van Tol, G W Morley & C Boehme, “Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds”, Science 330, 1652 (2010), 10.1126/science.1197931

3. G W Morley, M Warner, A M Stoneham, P T Greenland, J van Tol, C W M Kay & G Aeppli, “Initialization, manipulation and storage of quantum information using bismuth dopants in silicon”, Nature Materials 9, 725 (2010), 10.1038/nmat2828

2. M H Mohammady, G W Morley & T S Monteiro, “Bismuth Qubits in Silicon: The Role of EPR Cancellation Resonances”, Physical Review Letters 105, 067602 (2010), 10.1103/PhysRevLett.105.067602

1. Greenland PT, Lynch SA, van der Meer AFG, Murdin BN, Pidgeon CR, Redlich B, Vinh NQ, Aeppli G; “Coherent control of Rydberg states in silicon”, Nature 465, 7301, 1057-U116, 2010, 10.1038/nature09112